The GS-065-030-2-L-MR from Infineon Technologies is an Enhancement Mode GaN Power Transistor that is ideal for bridgeless totem-pole PFC, consumer, industrial, and datacenter high-density power supply, high power adapters, LED lighting drivers, appliance and industrial motor drives, solar inverter, uninterruptable power supplies, laser drivers and wireless power transfer applications. This transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of less than 1.7 V, and a drain-source on-resistance of 50 milli-ohms. It has a continuous drain current of up to 30 A and a pulsed drain current of less than 60 A.

This normally-off transistor includes a source sense (SS) pin which optimizes gate drive current capability for high-switching applications. It has fast and controllable fall and rise times with reverse conduction capability to ensure zero reverse recovery loss, thereby improving efficiency. This RoHS-compliant GaN transistor is available in a surface-mount package that measures 8 x 8 mm.