The IGK080B041S from Infineon is a Normally-off Bidirectional GaN Transistor that is ideal for high-side load switches, overvoltage protection (OVP) in smartphone USB ports, and switch circuits in multi-power supply systems applications. It has a continuous drain-to-drain voltage and drain-to-gate voltage of 40 V. This JEDEC-qualified transistor has a continuous drain current of 14 A, a pulsed drain current of 70 A and a total gate charge of up to 5.5 nC. It has a drain-to-drain configuration that offers seamless bidirectional current flow and blocking capability. This GaN transistor offers low on-resistance, low gate charge, and low output charge, ensuring minimal power loss. This RoHS-compliant transistor is available in a surface-mount package that measures 1.7 x 1.7 x 0.564 mm.