1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. Infineon Technologies
  6. IGLD60R070D1

IGLD60R070D1

GaN Power Transistor by Infineon Technologies (46 more products)
Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IGLD60R070D1 Image

The IGLD60R070D1 from Infineon Technologies is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 1.6 V, Drain Source Voltage 600 V, Drain Source Resistance 70 milli-ohm, Continous Drain Current 15 A, Pulsed Drain Current 35 to 60 A. Tags: Surface Mount. More details for IGLD60R070D1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGLD60R070D1
  • Manufacturer
    Infineon Technologies
  • Description
    Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R070D1 for ultimate efficiency and reliability

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.7 to 1.6 V
  • Drain Source Voltage
    600 V
  • Drain Source Resistance
    70 milli-ohm
  • Continous Drain Current
    15 A
  • Pulsed Drain Current
    35 to 60 A
  • Total Charge
    5.8 nC
  • Input Capacitance
    380 pF
  • Output Capacitance
    72 pF
  • Turn-on Delay Time
    15 ns
  • Turn-off Delay Time
    15 ns
  • Rise Time
    9 ns
  • Fall Time
    13 ns
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-LSON-8-1
  • Applications
    Industrial, telecom, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC).

Technical Documents
View details on the manufacturer's website
View similar products

Latest GaN Transistors

View more products