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IGLD65R080D2

GaN Power Transistor by Infineon Technologies (46 more products)
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The IGLD65R080D2 from Infineon Technologies is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 1.6 V, Drain Source Voltage 650 V, Drain Source Resistance 0.08 to 0.17 ohm, Continous Drain Current 18 A, Pulsed Drain Current -42 to 42 A. Tags: Surface Mount. More details for IGLD65R080D2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGLD65R080D2
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, 0.08 to 0.17 ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 1.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    0.08 to 0.17 ohm
  • Continous Drain Current
    18 A
  • Pulsed Drain Current
    -42 to 42 A
  • Total Charge
    4.6 nC
  • Input Capacitance
    230 pF
  • Output Capacitance
    37 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-LSON-8
  • Applications
    Telecom, Datacenter SMPS, Charger and adapter based on half-bridge topologies, Half-bridge topologies for hard and soft  switching such as Totem pole PFC, High frequency LLC

Technical Documents
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