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IGLT65R025D2

GaN Power Transistor by Infineon Technologies (46 more products)
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The IGLT65R025D2 from Infineon Technologies is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 1.6 V, Drain Source Voltage 650 V, Drain Source Resistance 0.025 to 0.053 ohm, Continous Drain Current 67 A, Pulsed Drain Current -130 to 130 A. Tags: Surface Mount. More details for IGLT65R025D2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGLT65R025D2
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, 0.025 to 0.053 ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 1.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    0.025 to 0.053 ohm
  • Continous Drain Current
    67 A
  • Pulsed Drain Current
    -130 to 130 A
  • Total Charge
    16 nC
  • Input Capacitance
    770 pF
  • Output Capacitance
    122 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-HDSOP-16
  • Applications
    Telecom, Datacenter SMPS, Charger and adapter based on half-bridge topologies, Half-bridge topologies for hard and soft  switching such as Totem pole PFC, High frequency LLC

Technical Documents
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