1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. Infineon Technologies
  6. IGLT65R110D2

IGLT65R110D2

GaN Power Transistor by Infineon Technologies (46 more products)
Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

The IGLT65R110D2 from Infineon Technologies is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 1.6 V, Drain Source Voltage 650 V, Drain Source Resistance 0.11 to 0.24 ohm, Continous Drain Current 15 A, Pulsed Drain Current -30 to 30 A. Tags: Surface Mount. More details for IGLT65R110D2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGLT65R110D2
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, 0.11 to 0.24 ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 1.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    0.11 to 0.24 ohm
  • Continous Drain Current
    15 A
  • Pulsed Drain Current
    -30 to 30 A
  • Total Charge
    3.4 nC
  • Input Capacitance
    170 pF
  • Output Capacitance
    27 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-HDSOP-16
  • Applications
    Telecom, Datacenter SMPS, Charger and adapter based on half-bridge topologies, Half-bridge topologies for hard and soft  switching such as Totem pole PFC, High frequency LLC

Technical Documents
View details on the manufacturer's website
View similar products