The IGLT65R110D2 from Infineon Technologies is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 1.6 V, Drain Source Voltage 650 V, Drain Source Resistance 0.11 to 0.24 ohm, Continous Drain Current 15 A, Pulsed Drain Current -30 to 30 A. Tags: Surface Mount. More details for IGLT65R110D2 can be seen below.