The IGT40R070D1 E8220 from Infineon Technologies is an Enhancement Mode GaN Power Transistor that is ideal for class-D audio amplifier applications. This transistor has a drain-source breakdown voltage of 400 V, a gate threshold voltage of 1.2 V, and a drain-source resistance of 70 milli-ohms. It has a continuous drain current of up to 31 A and a pulsed drain current of less than 60 A . This normally-off GaN transistor has a low gate charge and output charge in addition to zero reverse-recovery charge, delivering an improved efficiency due to figure of merit (FOM) in the 400 V product class. It offers superior commutation ruggedness while being compatible with the existing control ICs. This JEDEC-qualified power transistor exhibits ultra-fast switching and is capable of reverse conduction. It has a lower total harmonic distortion when compared to best-in class silicon switches. This power transistor is available in a surface-mount package that measures 11.67 x 9.9 mm.