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INN030FQ015A

GaN Power Transistor by Innoscience (83 more products)
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The INN030FQ015A from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 2.1 V, Drain Source Voltage 30 V, Drain Source Resistance 1.2 to 1.5 milli-ohm, Continous Drain Current 60 A, Pulsed Drain Current 300 A. Tags: Surface Mount. More details for INN030FQ015A can be seen below.

Product Specifications

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Product Details

  • Part Number
    INN030FQ015A
  • Manufacturer
    Innoscience
  • Description
    30 V, 1.2 to 1.5 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 2.1 V
  • Drain Source Voltage
    30 V
  • Drain Source Resistance
    1.2 to 1.5 milli-ohm
  • Continous Drain Current
    60 A
  • Pulsed Drain Current
    300 A
  • Total Charge
    22.8 nC
  • Input Capacitance
    3.4 nF
  • Output Capacitance
    1.8 nF
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    FCQFN
  • Applications
    High frequency DC-DC converter, Battery charger, Battery management system, Notebook
  • Dimensions
    5 x 4 mm

Technical Documents
View details on the manufacturer's website
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