The INN040FQ012A from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.4 V, Drain Source Voltage 40 V, Drain Source Resistance 0.9 to 1.2 milli-ohm, Continous Drain Current 100 A, Pulsed Drain Current 500 A. Tags: Surface Mount. More details for INN040FQ012A can be seen below.