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INN040FQ012A

GaN Power Transistor by Innoscience (83 more products)
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The INN040FQ012A from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.4 V, Drain Source Voltage 40 V, Drain Source Resistance 0.9 to 1.2 milli-ohm, Continous Drain Current 100 A, Pulsed Drain Current 500 A. Tags: Surface Mount. More details for INN040FQ012A can be seen below.

Product Specifications

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Product Details

  • Part Number
    INN040FQ012A
  • Manufacturer
    Innoscience
  • Description
    40 V, 0.9 to 1.2 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.8 to 2.4 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    0.9 to 1.2 milli-ohm
  • Continous Drain Current
    100 A
  • Pulsed Drain Current
    500 A
  • Total Charge
    60 nC
  • Input Capacitance
    3500 pF
  • Output Capacitance
    1600 pF
  • Temperature operating range
    -40 to 125 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    FCQFN
  • Applications
    High side load switch, OVP protection in smart phone USB port, Switch circuits in multiple power suppliers system
  • Dimensions
    6 x 4 mm

Technical Documents
View details on the manufacturer's website
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