1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. Innoscience
  6. INN040W080A

INN040W080A

GaN Power Transistor by Innoscience (83 more products)
Download Datasheet Request Quote

Note : Your request will be directed to Innoscience.

The INN040W080A from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.4 V, Drain Source Voltage 40 V, Drain Source Resistance 6.1 to 8 milli-ohm, Continous Drain Current 14 A, Pulsed Drain Current 70 A. Tags: Surface Mount. More details for INN040W080A can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    INN040W080A
  • Manufacturer
    Innoscience
  • Description
    40 V, 6.1 to 8 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.8 to 2.4 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    6.1 to 8 milli-ohm
  • Continous Drain Current
    14 A
  • Pulsed Drain Current
    70 A
  • Total Charge
    10.1 nC
  • Input Capacitance
    566 pF
  • Output Capacitance
    243 pF
  • Temperature operating range
    -40 to 125 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WLCSP
  • Applications
    High side load switch, OVP protection in smart phone USB port, Switch circuits in multiple power suppliers system
  • Dimensions
    1.7 x 1.7 mm

Technical Documents
View details on the manufacturer's website
View similar products