The INN040W080A from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.4 V, Drain Source Voltage 40 V, Drain Source Resistance 6.1 to 8 milli-ohm, Continous Drain Current 14 A, Pulsed Drain Current 70 A. Tags: Surface Mount. More details for INN040W080A can be seen below.