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INN060FQ043A

GaN Power Transistor by Innoscience (83 more products)
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The INN060FQ043A from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 2.4 V, Drain Source Voltage 60 V, Drain Source Resistance 3 to 4.3 milli-ohm, Continous Drain Current 24 A, Pulsed Drain Current 160 A. Tags: Surface Mount. More details for INN060FQ043A can be seen below.

Product Specifications

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Product Details

  • Part Number
    INN060FQ043A
  • Manufacturer
    Innoscience
  • Description
    60 V, 3 to 4.3 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.7 to 2.4 V
  • Drain Source Voltage
    60 V
  • Drain Source Resistance
    3 to 4.3 milli-ohm
  • Continous Drain Current
    24 A
  • Pulsed Drain Current
    160 A
  • Total Charge
    6.2 nC
  • Input Capacitance
    805 pF
  • Output Capacitance
    428 pF
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    FCQFN
  • Applications
    High frequency DC-DC converter, Point of Load, RF envelope tracking, PC charger, Mobile power bank, Motor driver
  • Dimensions
    3 x 4 mm

Technical Documents
View details on the manufacturer's website
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