The INN650D140A from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for AC-DC converters, DC-DC converters, and totem poles PFC, fast battery charging, and high density and efficiency power conversion applications. It has a drain-source breakdown voltage of up to 650 V, a gate threshold voltage of 1.7 V, and drain-source on-resistance of less than 140 mΩ. It has a continuous drain current of up to 17 A and a pulsed drain current of less than 32 A. This REACH-compliant transistor is a normally-off power switch and has a very high switching frequency. It offers zero reverse recovery charge, low gate charge, and a low output charge. This RoHS-compliant power transistor provides electrostatic discharge protection to prevent high electric field-related damages. It is available in a surface-mount package that measures 8 x 8 mm.