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INN650TA070AH

GaN Power Transistor by Innoscience (83 more products)
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The INN650TA070AH from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 1.2 to 2.5 V, Drain Source Voltage 650 V, Drain Source Resistance 53 to 122 milli-ohm, Continous Drain Current 26 A, Pulsed Drain Current 60 A. Tags: Surface Mount. More details for INN650TA070AH can be seen below.

Product Specifications

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Product Details

  • Part Number
    INN650TA070AH
  • Manufacturer
    Innoscience
  • Description
    650 V, 53 to 122 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.2 to 2.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    53 to 122 milli-ohm
  • Continous Drain Current
    26 A
  • Pulsed Drain Current
    60 A
  • Total Charge
    8.5 nC
  • Input Capacitance
    300 pF
  • Output Capacitance
    135 pF
  • Turn-on Delay Time
    10 ns
  • Turn-off Delay Time
    7 ns
  • Rise Time
    9 ns
  • Fall Time
    9 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TOLL
  • Applications
    AC-DC converters, DC-DC converters, Totem pole PFC, Fast battery charging, High density power conversion, High efficiency power conversion

Technical Documents
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