The INN80LA01 from Innoscience is an Automotive Qualified Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for LiDAR application, synchronous rectification & class-D audio, envelope tracking power supplies, high frequency DC-DC converter applications. This AEC-Q101-qualified GaN transistor has a drain-source voltage of over 80 V, a gate threshold voltage of 1.15 V, and a drain-source on-resistance of 6 milli-ohms. It has a continuous drain current of up to 13 A and a pulsed drain current of less than 180 A. This GaN-on-Si transistor offers very high switching frequency and exceptionally low on-resistance. It ensures zero reverse recovery charge along with fast rise and fall times, making it ideal for high-performance applications. This transistor is available in a surface-mount package that measures 3.40 x 2.40 mm.