The ISG3201 from Innoscience is a Half-Bridge Solid-GaN Gate Driver that is ideal for AI, server, telecom, supercomputer, motor drive applications. The transistor has a drain-source voltage of less than 100 V, a gate threshold voltage of up to 2.5 V, and a drain-source on-resistance of 2.4 milli-ohms. It has a continuous drain current of 28 A. This transistor is manufactured using Innoscience's GaN-on-Silicon HEMT technology and provides zero reverse recovery charge while requiring a very low gate charge making it suitable for fast switching and low power loss applications. It is available in a surface-mount package that measures 5 x 6.5 x 1.12 mm.