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GPT65Z1SHD

GaN Power Transistor by MGT Technology (3 more products)
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The GPT65Z1SHD from MGT Technology is a GaN Power Transistor with Gate Threshold Voltage -4.7 V, Drain Source Voltage 650 V, Drain Source Resistance 16000 milli-ohm, Continous Drain Current 0.35 A, Temperature operating range -55 to 150 Degree C. Tags: Surface Mount. More details for GPT65Z1SHD can be seen below.

Product Specifications

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Product Details

  • Part Number
    GPT65Z1SHD
  • Manufacturer
    MGT Technology
  • Description
    650 V, 16000 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    -4.7 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    16000 milli-ohm
  • Continous Drain Current
    0.35 A
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    AC/DC LED Power Supply, LED AC Lamps, LED DC Lamps

Technical Documents
View details on the manufacturer's website
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