The GAN140-650EBEZ from Nexperia is an Enhancement Mode GaN Power Transistor that is ideal for high power density and high-efficiency power conversion, AC-to-DC converters, totem pole PFC, DC-to-DC converters, fast battery charging, mobile phones, laptop, tablet and USB type-C chargers, datacom and telecom (AC-to-DC and DC-to-DC) converters, motor drives, solar (PV) inverters, Class D audio amplifiers, TV PSU and LED driver applications.  This transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of less than 1.7 V, and a drain-source on-resistance of 140 milli-ohms. It has a continuous drain current of up to 17 A and a pulsed drain current of less than 32 A. This normally-off transistor has a low gate charge and low output charge, which increases its efficiency and power density and makes it suitable for standard applications. It has no body diode and provides electrostatic discharge (ESD) protection capability for ultra-high frequency switching operations. This RoHS-compliant GaN transistor is available in a surface-mount package that measures 8 x 8 mm.