The GANE3R9-150QBAZ from Nexperia is an Enhancement Mode GaN Power Transistor that is ideal for high power density and high-efficiency power conversion, secondary stage AC-to-DC converters, high-frequency DC-to-DC converters in 48 V systems, fast battery charging, mobile phone, laptop, tablet, USB type-C chargers, datacom and telecom (AC-to-DC and DC-to-DC) converters, motor drives, LiDAR (non-automotive), and Class D audio amplifier applications. It has a drain-source voltage of up to 150 V, a gate-source threshold voltage of up to 1.1 V, and a drain-source resistance of less than 3.9 milli-ohms. This GaN transistor has a drain current of up to 100 A and power dissipation of up to 65 W. It is a normally off enhancement mode device that has been qualified for standard applications.

This GaN field effect transistor (FET) has a low gate charge and output charge, which results in high efficiency and power density to support very high-frequency switching applications. It has no body diode and offers electrostatic discharge protection (ESD) to ensure safety and reliability during operation. This RoHS-compliant GaN FET is available in a surface-mount package that measures 4 x 6 mm.