The ISL70023SEHML from Renesas is an Enhancement Mode GaN Power Transistor that is ideal for switching regulation, motor drives, relay drives, inrush protection, and downhole drilling applications. The transistor has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of up to 2.5 V, and a drain-source on-resistance of less than 12 milli-ohms. It has a continuous drain current of up to 60 A. This transistor provides the ability to significantly reduce gate drive power and lower the cost. It is manufactured for destructive single-event effects (SEE) and has been tested for total ionizing dose (TID) radiation to ensure reliability in space environments. This MIL-PRF-38535-rated GaN transistor has exceptionally high electron mobility and a low temperature coefficient, thereby resulting in a very low on-state drain source resistance value, while its lateral device structure and majority carrier diode provide exceptionally low gate charge and near-zero reverse recovery charge, making it reliable for higher switching frequency and efficiency applications. This RoHS-compliant transistor is available in a hermetically-sealed surface-mount package that measures 9.0 x 4.7 mm.