The ISL73024SEH from Renesas is an Enhancement Mode GaN Power Transistor that is ideal for switching regulation, motor drives, relay drives, inrush protection, and down hole drilling applications. The transistor has a drain-source breakdown voltage of over 200 V and a gate threshold voltage of 1.4 V, and a drain-source on-resistance of 45 milli-ohms. It has a continuous drain current of up to 7.5 A. This transistor provides the ability to significantly reduce gate drive power and lower the cost. It is manufactured for destructive single event effects (SEE) and has been tested for total ionizing dose (TID) radiation. This MIL-PRF-38535-rated GaN transistor has exceptionally high electron mobility and low temperature coefficient, thereby resulting in very low on-state drain source resistance value, while its lateral device structure and majority carrier diode provide exceptionally low gate charge and near zero reverse recovery charge, making it reliable for higher switching frequency and efficiency applications. It is available in a surface-mount package that measures 9 x 4.7 x 1.82 mm.