The GNE1008TB from ROHM Semiconductor is an Enhancement Mode GaN Power Transistor that is ideal for IR LED, LED driver, half-bridge topologies, AC/DC converters (secondary side), and Class D audio amplifier applications. It has a drain-source breakdown voltage of over 150 V, a gate threshold voltage of 1 V, and a drain-source on-resistance of less than 12.8 milli-ohms. This transistor has a continuous drain current of up to 14.2 A and a pulsed drain current of less than 30 A. It achieves high power conversion efficiency and reduced size by making the best use of low drain-source on-resistance and high switching speed. This power transistor is housed in a highly versatile package that provides excellent heat dissipation and reliable mounting. It is available in a surface-mount package that measures 5 x 6 mm.