The SGF15D100J from Solid State Devices is a Depletion Mode GaN Power Transistor that is ideal for high-efficiency DC-DC / PoL converters, motor controllers, robotics/automation, and military and aerospace applications. This power transistor has a drain-source breakdown voltage of over 1000 V, a gate threshold voltage of -12 V, and a drain-source on-resistance of 140 milli-ohms. It has a continuous drain current of up to 15 A and a pulsed drain current of less than 58 A. This transistor is based on the third-generation Gallium Nitride technology that offers superior advantages over the Silicon-based MOSFET counterpart. It has a zero reverse recovery charge with a low gate charge that simplifies the gate driver circuit. This transistor has low cross-over losses and thermal resistance to improve thermal enhancement for aerospace applications. It offers very fast switching with low on-state losses making it suitable for high-frequency applications. This normally-on GaN transistor is available in a through-hole package that measures 1.760 x 0.420 inches.