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SGF15D100JDB

GaN Power Transistor by Solid State Devices (20 more products)
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The SGF15D100JDB from Solid State Devices is a GaN Power Transistor with Gate Threshold Voltage -27 to -8 V, Drain Source Voltage 1000 V, Drain Source Resistance 140 to 350 milli-ohm, Continous Drain Current 15 A, Pulsed Drain Current 58 A. Tags: Through Hole. More details for SGF15D100JDB can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGF15D100JDB
  • Manufacturer
    Solid State Devices
  • Description
    1000 V, 140 to 350 milli-ohm, 15 A GaN Transistor

General

  • Configuration
    Single
  • Industry
    Military, Space, Commercial, Industrial
  • Gate Threshold Voltage
    -27 to -8 V
  • Drain Source Voltage
    1000 V
  • Drain Source Resistance
    140 to 350 milli-ohm
  • Continous Drain Current
    15 A
  • Pulsed Drain Current
    58 A
  • Total Charge
    30 nC
  • Input Capacitance
    135 pF
  • Output Capacitance
    44 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-257
  • Applications
    High Efficiency DC-DC / PoL Converters, Motor Controller, Robotics/Automation

Technical Documents
View details on the manufacturer's website
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