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SGF15E100JUB

GaN Power Transistor by Solid State Devices (20 more products)
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The SGF15E100JUB from Solid State Devices is a GaN Power Transistor with Gate Threshold Voltage 1.6 to 2.6 V, Drain Source Voltage 1000 V, Drain Source Resistance 160 to 350 milli-ohm, Continous Drain Current 15 A, Pulsed Drain Current 58 A. Tags: Through Hole. More details for SGF15E100JUB can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGF15E100JUB
  • Manufacturer
    Solid State Devices
  • Description
    1000 V, 160 to 350 milli-ohm, 15 A GaN Transistor

General

  • Configuration
    Single
  • Industry
    Military, Space, Commercial, Industrial
  • Gate Threshold Voltage
    1.6 to 2.6 V
  • Drain Source Voltage
    1000 V
  • Drain Source Resistance
    160 to 350 milli-ohm
  • Continous Drain Current
    15 A
  • Pulsed Drain Current
    58 A
  • Total Charge
    10 nC
  • Input Capacitance
    780 pF
  • Output Capacitance
    41 pF
  • Turn-on Delay Time
    26 ns
  • Turn-off Delay Time
    40 ns
  • Rise Time
    5 ns
  • Fall Time
    7.4 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-257
  • Applications
    High Efficiency DC-DC / PoL Converters, Motor Controller, Robotics/Automation

Technical Documents
View details on the manufacturer's website
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