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SGF48N10MDB

GaN Power Transistor by Solid State Devices (20 more products)
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The SGF48N10MDB from Solid State Devices is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 100 V, Drain Source Resistance 8 to 10 milli-ohm, Continous Drain Current 48 A, Pulsed Drain Current 340 A. Tags: Through Hole. More details for SGF48N10MDB can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGF48N10MDB
  • Manufacturer
    Solid State Devices
  • Description
    100 V, 8 to 10 milli-ohm, 48 A GaN Transistor

General

  • Configuration
    Single
  • Industry
    Military, Space, Commercial, Industrial
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    8 to 10 milli-ohm
  • Continous Drain Current
    48 A
  • Pulsed Drain Current
    340 A
  • Total Charge
    12 to 15 nC
  • Input Capacitance
    1270 to 1530 pF
  • Output Capacitance
    800 to 1200 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-254
  • Applications
    High Efficiency DC-DC / PoL Converters, Motor Controller, Robotics/Automation

Technical Documents
View details on the manufacturer's website
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