1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. Taiwan Semiconductor
  6. TSG65N110CE RVG

TSG65N110CE RVG

GaN Power Transistor by Taiwan Semiconductor (3 more products)
Download Datasheet Request Quote

Note : Your request will be directed to Taiwan Semiconductor.

The TSG65N110CE RVG from Taiwan Semiconductor is a GaN Power Transistor with Gate Threshold Voltage 1.1 to 2.6 V, Drain Source Voltage 650 V, Drain Source Resistance 78 to 197 milli-ohm, Continous Drain Current 18 A, Pulsed Drain Current 35 A. Tags: Surface Mount. More details for TSG65N110CE RVG can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TSG65N110CE RVG
  • Manufacturer
    Taiwan Semiconductor
  • Description
    650 V, 78 to 197 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.1 to 2.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    78 to 197 milli-ohm
  • Continous Drain Current
    18 A
  • Pulsed Drain Current
    35 A
  • Total Charge
    4 nC
  • Input Capacitance
    132 pF
  • Output Capacitance
    34 pF
  • Turn-on Delay Time
    1.5 nS
  • Turn-off Delay Time
    2.9 nS
  • Rise Time
    5 nS
  • Fall Time
    4.8 nS
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN88
  • Applications
    Consumer and Industrial Power Supplies, Power Adapters, LED Lighting Drivers, Fast Battery Charging, Power Factor Correction, Appliance and Industrial Motor Drives, Wireless Power Transfer

Technical Documents
View details on the manufacturer's website
View similar products