The TSG65N190CR RVG from Taiwan Semiconductor is an Enhancement Mode GaN Power Transistor that is ideal for power adapters, LED lighting drivers, fast battery charging, power factor correction, appliance motor drives, wireless power transfer, and power supply applications. This GaN transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of 150 milli-ohms. It has a continuous drain current of less than 11 A and a pulsed drain current of up to 19 A.

This transistor boasts a very low figure of merit (FOM) and requires only a simple gate drive voltage. It operates at high switching frequencies over 1 MHz and provides fast, controllable rise and fall times. This power transistor features reverse conduction capability, zero reverse recovery loss, and a source sense (SS) pin for optimized gate drive performance. This RoHS-compliant transistor is available in a surface-mount package that measures 5 x 6 mm.