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TDG100E90BEPF

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The TDG100E90BEPF from Teledyne e2v HiRel Electronics is a GaN Power Transistor with Gate Threshold Voltage 1.1 to 2.6 V, Drain Source Voltage 100 V, Drain Source Resistance 6 to 20 milli-ohm, Continous Drain Current 90 A, Pulsed Drain Current 140 A. Tags: Die. More details for TDG100E90BEPF can be seen below.

Product Specifications

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Product Details

  • Part Number
    TDG100E90BEPF
  • Manufacturer
    Teledyne e2v HiRel Electronics
  • Description
    100 V, 6 to 20 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.1 to 2.6 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    6 to 20 milli-ohm
  • Continous Drain Current
    90 A
  • Pulsed Drain Current
    140 A
  • Total Charge
    8 nC
  • Input Capacitance
    600 pF
  • Output Capacitance
    250 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Applications
    High efficiency power conversion, High density power conversion, ac-dc Converters, Bridgeless Totem Pole PFC, ZVS Phase Shifted Full Bridge, Half & Full Bridge topologies, Synchronous Buck or Boost, Uninterruptable Power Supplies, Motor Drives, Single and
  • Dimensions
    7.6 x 4.6 x 0.5 mm

Technical Documents
View details on the manufacturer's website
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