The TDG650E15BEP from Teledyne e2v HiRel Electronics is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for high-efficiency power conversion, high-density power conversion, AC-DC converters, bridgeless totem-pole PFC, ZVS phase-shifted full bridge, half & full bridge topologies, uninterruptable power supplies, motor drives, single and three-phase inverter legs, solar and wind power, fast battery charging, DC-DC converters, on-board battery chargers, and e-switch applications. This transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of less than 180 milli-ohms. It has a continuous drain current of up to 15 A and a pulsed drain current of less than 30 A.

This transistor features a patented island technology cell layout that ensures excellent die performance and high efficiency. It is designed with a GaNPX package with built-in bottom-side-cooling mechanism that offers a low thermal resistance. This RoHS-compliant transistor also supports zero reverse recovery loss, reverse current capability, and fast, controllable switching times. It is available in a surface-mount package that measures 6.56 x 5.01 mm.