The TDG650E30BSP from Teledyne e2v HiRel Electronics is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for high efficiency power conversion, high density power conversion, ac-dc converters, bridgeless totem pole PFC, ZVS phase-shifted full bridge, half- and full-bridge topologies, synchronous buck or boost, uninterruptable power supplies, space motor drives, solar and wind power, fast battery charging, on-board battery chargers and e-switch applications. This JEDEC-qualified GaN transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of 50 milli-ohms. It has a continuous drain current of less than 30 A and a pulsed drain current of up to 60 A. This transistor utilizes advanced GaN system technology to deliver high current, high voltage breakdown, and exceptional switching frequency capabilities. It employs a patented island technology cell layout, enhancing high current performance and yield.

This transistor, utilizes GaNPX packaging technology to minimize parasitic inductance and thermal resistance, thereby resulting in efficiency gains in a compact form factor. It is designed with a bottom-side cooling configuration, providing very low junction-to-case thermal resistance. This transistor ensures very high-efficiency power switching, making it an ideal choice for applications where energy efficiency is a critical factor. It has undergone rigorous screening processes, meeting NASA Level 1/ESA Class 1 standard and can achieve full Level 1 conformance with additional qualification testing, if required. This RoHS-compliant transistor has EAR99 export classification or European sourcing for flexibility and compliance with global regulatory standards. It is available in a PCB-mount package that measures 7.10 x 8.50 x 0.56 mm.