The TDG650E601TSP from Teledyne e2v HiRel Electronics is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for battery management, traction drives, dc-dc converters, space motor drives, and bridgeless totem pole PFC applications. This GaN transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of 25 milli-ohms. It has a continuous drain current of less than 60 A and a pulsed drain current of up to 120 A. This transistor is engineered with high current, high voltage breakdown, and exceptional switching frequency capabilities. It incorporates GaN Systems' patented Island technology for high-current dies and high yields and GaNPX packaging that minimizes inductance and thermal resistance. This transistor operates at ultra-high switching frequencies above 10 MHz and requires a simple gate drive operation. It is transient-tolerant, supports reverse conduction, and has zero reverse recovery loss. This transistor has dual gate pads that facilitate optimal board layout. It is available in a PCB-mount package that measures 9.00 x 7.64 mm.