The TDG650E60BEPF from Teledyne e2v HiRel Electronics is an Enhancement Mode GaN Transistor that is ideal for high-efficiency power conversion, high-density power conversion, AC-DC converters, bridgeless totem-pole PFC, ZVS phase shifted full bridge, half & full bridge topologies, synchronous buck or boost, uninterruptable power supplies, motor drives, single and three phase inverter legs, solar and wind power, fast battery charging, DC-DC converters, on-board battery chargers and e-switch applications. This transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of less than 1.7 V, and a drain-source on-resistance of 25 milli-ohms. It has a continuous drain current of up to 60 A and a pulsed drain current of less than 120 A. This normally-off transistor is designed with a low inductance GaNPX package and has an ultra-low FOM die which nullifies reverse recovery current loss which makes it ideal for high switching applications. It has simple gate requirements and has fast and controllable fall and rise times. This RoHS 3 (6+4) compliant GaN transistor has reverse current capability and has dual gate pads for optimal board layout. It is available in a surface-mount package that measures 11.02 x 9.02 mm.