The TDG650E60TEPF from Teledyne e2v HiRel Electronics is an Enhancement Mode GaN-on-Silicon Power Transistor. This transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of 25 milli-ohms. It has a continuous drain current of 60 A and a pulsed drain current of 120 A. This normally off transistor offers low inductance and thermal resistance for high-efficiency power switching. This GaN transistor has a top-side cooled configuration that offers very low junction-to-case thermal resistance for demanding high-power applications. It has zero reverse recovery loss and has fast and controllable fall and rise times. This RoHS 3-compliant GaN transistor is available in a surface-mount package that measures 9 x 7.6 mm and is suitable for high-efficiency power conversion, high-density power conversion, ac-dc converters, bridgeless totem-pole PFC, ZVS phase shifted full bridge, half and full bridge topologies, synchronous buck or boost, uninterruptable power supplies, motor drives, single and three-phase inverter legs, solar and wind power, fast battery charging, dc-dc converters, onboard battery chargers, and e-switch applications.