The TP65H035G4WS from Transphorm is a GaN Power Field Effect Transistor. It has a drain-source voltage of 650 V and a drain-source resistance of 35-72 mΩ. It has a gate threshold voltage of 3.3-4.8 V and gate to source voltage of ±20 V. This JEDEC-qualified GaN transistor has a continuous drain current of 29.5-46.5 A and a pulsed drain current of 240 A. It combines a state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance. 

The TP65H035G4WS is based on Transphorm’s Gen IV SuperGaN platform that uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. This RoHS-compliant transistor achieves increased efficiency in both hard and soft-switched circuits and is compatible with commonly-used gate drivers. It is available in a through-hole package and is ideal for datacom, PV inverter, servo motor, and broad industrial applications.