1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. Transphorm
  6. TP65H035G4WSQA

TP65H035G4WSQA

GaN Power Transistor by Transphorm (32 more products)
Download Datasheet Request Quote

Note : Your request will be directed to Transphorm.

The TP65H035G4WSQA from Transphorm is a GaN Power Transistor with Gate Threshold Voltage 3.3 to 4.8 V, Drain Source Voltage 650 V, Drain Source Resistance 35 to 84 milli-ohm, Continous Drain Current 47.2 A, Pulsed Drain Current 240 A. Tags: Through Hole. More details for TP65H035G4WSQA can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TP65H035G4WSQA
  • Manufacturer
    Transphorm
  • Description
    650 V, 35 to 84 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Automotive, Commercial, Industrial
  • Gate Threshold Voltage
    3.3 to 4.8 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    35 to 84 milli-ohm
  • Continous Drain Current
    47.2 A
  • Pulsed Drain Current
    240 A
  • Total Charge
    22 nC
  • Input Capacitance
    1500 pF
  • Output Capacitance
    147 pF
  • Turn-on Delay Time
    60 ns
  • Turn-off Delay Time
    94 ns
  • Rise Time
    10 ns
  • Fall Time
    10 ns
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Datacom, Broad industrial, PV inverter, Servo motor

Technical Documents
View details on the manufacturer's website
View similar products

Latest GaN Transistors

View more products