The TP65H050G4WS from Transphorm is a Gallium Nitride (GaN) Field Effect Transistor that is ideal for datacom, broad industrial, PV inverter, and servo motor applications. It has a drain-source voltage of over 650 V, a gate threshold voltage of up to 4.8 V, and a drain-source on-resistance of less than 60 milli-ohms. This GaN FET has a continuous drain current of up to 34 A and a pulsed drain current of less than 150 A. It is a normally-off device that combines state-of-the-art high-voltage GaN HEMT with low-voltage Silicon MOSFET, resulting in superior reliability and performance. This GaN transistor offers improved efficiency over Silicon due to inherent lower gate charge, lower crossover loss, and smaller reverse recovery charge.

This JEDEC-qualified GaN FET offers a robust design with a wide gate safety margin and transient over-voltage capability. It is designed to provide an increased power density, reduced system size, and weight, and an overall lower system cost. This RoHS-compliant transistor achieves increased efficiency in both hard and soft-switched circuits and is compatible with commonly used gate drivers. It is available in a through-hole package that measures 40.79 x 15.90 x 5.00 mm.