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TP65H050G4YS

GaN Power Transistor by Transphorm (32 more products)
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The TP65H050G4YS from Transphorm is a GaN Power Transistor with Gate Threshold Voltage 3.3 to 4.8 V, Drain Source Voltage 650 V, Drain Source Resistance 50 to 105 milli-ohm, Continous Drain Current 35 A, Pulsed Drain Current 150 A. Tags: Through Hole. More details for TP65H050G4YS can be seen below.

Product Specifications

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Product Details

  • Part Number
    TP65H050G4YS
  • Manufacturer
    Transphorm
  • Description
    650 V, 50 to 105 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    3.3 to 4.8 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    50 to 105 milli-ohm
  • Continous Drain Current
    35 A
  • Pulsed Drain Current
    150 A
  • Total Charge
    24 nC
  • Input Capacitance
    1000 pF
  • Output Capacitance
    110 pF
  • Turn-on Delay Time
    40 ns
  • Turn-off Delay Time
    40 ns
  • Rise Time
    5 ns
  • Fall Time
    8 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Datacom, Broad industrial, PV inverter, Servo motor

Technical Documents
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