The TP65H050G4YS from Transphorm is a GaN Power Transistor with Gate Threshold Voltage 3.3 to 4.8 V, Drain Source Voltage 650 V, Drain Source Resistance 50 to 105 milli-ohm, Continous Drain Current 35 A, Pulsed Drain Current 150 A. Tags: Through Hole. More details for TP65H050G4YS can be seen below.