The TP65H070G4LSGB-TR from Transphorm is an Enhancement Mode GaN Field Effect Transistor that is ideal for datacom, broad industrial equipment, PV inverters, servo motors, consumer electronics, and computing applications. This GaN transistor has a drain-source voltage of over 650 V, a gate threshold voltage of 3.2–4.6 V, and a drain-source on-resistance of less than 85 milli-ohms. It has a continuous drain current of up to 29 A and a pulsed drain current of less than 120 A. This GaN power transistor combines state-of-the-art high-voltage GaN HEMT technology with a low-voltage Silicon MOSFET to offer superior reliability and performance. It is compatible with commonly-used gate drivers making it easier to integrate with older silicon-based systems and has an optimized GSD pin layout to facilitate high-speed design.

This JEDEC-qualified GaN transistor is based on Transphorm’s Gen IV SuperGaN platform that uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.  It offers increased power density, and increased efficiency in both hard and soft-switched circuits resulting in reduced system size and weight and overall lower system cost. This RoHS-compliant GaN transistor has a wide gate safety margin and transient over-voltage capability to prevent over-voltage-related damages. It is available in a surface-mount package that measures 8 x 8 mm.