The TP65H100G4LSGB-TR from Transphorm is a GaN Field Effect Transistor that combines state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 3.65 V, and a drain-source on-resistance of 92 milli-ohms. This transistor has a continuous drain current of up to 18.9 A and a pulsed drain current of less than 95 A. It is based on the Gen IV SuperGaN platform that employs advanced epi and patented design technologies. This GaN transistor is a normally-off device that exhibits lower gate charge, output capacitance, crossover loss, and reverse recovery charge to improve efficiency over silicon counterparts. It has a robust design that is characterized by its wide gate safety margin and tolerance to transient over-voltage.

This JEDEC-qualified transistor has reduced system size and weight which improves its power density while lowering overall system cost. It can be driven simply with commonly used gate drivers and has a GSD pin layout to support hard and soft switching circuits. This GaN transistor is available in a surface mount package that measures 8 x 8 mm and is ideal for consumers, power adapters, low-power SMPS and lighting applications.