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TP65H100G4PS

GaN Power Transistor by Transphorm (32 more products)
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The TP65H100G4PS from Transphorm is a GaN Power Transistor with Gate Threshold Voltage 3.2 to 4.1 V, Drain Source Voltage 650 V, Drain Source Resistance 92 to 184 milli-ohm, Continous Drain Current 18.9 A, Pulsed Drain Current 95 A. Tags: Through Hole. More details for TP65H100G4PS can be seen below.

Product Specifications

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Product Details

  • Part Number
    TP65H100G4PS
  • Manufacturer
    Transphorm
  • Description
    650 V, 92 to 184 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    3.2 to 4.1 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    92 to 184 milli-ohm
  • Continous Drain Current
    18.9 A
  • Pulsed Drain Current
    95 A
  • Total Charge
    14.4 nC
  • Input Capacitance
    818 pF
  • Output Capacitance
    53 pF
  • Turn-on Delay Time
    23 ns
  • Turn-off Delay Time
    58 ns
  • Rise Time
    7.1 ns
  • Fall Time
    7.5 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Consumer, Power adapters, Low power SMPS, Lighting

Technical Documents
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