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TP65H150BG4JSG-TR

GaN Power Transistor by Transphorm (32 more products)
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The TP65H150BG4JSG-TR from Transphorm is a GaN Power Transistor with Gate Threshold Voltage 2 to 2.8 V, Drain Source Voltage 650 V, Drain Source Resistance 150 to 307 milli-ohm, Continous Drain Current 16 A, Pulsed Drain Current 55 A. Tags: Surface Mount. More details for TP65H150BG4JSG-TR can be seen below.

Product Specifications

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Product Details

  • Part Number
    TP65H150BG4JSG-TR
  • Manufacturer
    Transphorm
  • Description
    650 V, 150 to 307 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    2 to 2.8 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    150 to 307 milli-ohm
  • Continous Drain Current
    16 A
  • Pulsed Drain Current
    55 A
  • Total Charge
    4.9 nC
  • Input Capacitance
    400 pF
  • Output Capacitance
    37 pF
  • Turn-on Delay Time
    24 ns
  • Turn-off Delay Time
    22 ns
  • Rise Time
    3.2 ns
  • Fall Time
    4 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN
  • Applications
    Consumer, Power adapters, Low power SMPS, Lighting
  • Dimensions
    5 x 6 mm

Technical Documents
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