The TP65H150G4PS from Transphorm is an Enhancement Mode SuperGaN FET Power Transistor that is ideal for consumers, power adapters, low-power SMPS, and lighting applications. This transistor has a drain-source voltage of over 650 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of 150 mΩ. It has a continuous drain current of up to 13 A and a pulsed drain current of less than 60 A. This JEDEC-qualified GaN transistor combines state-of-the-art high-voltage GaN HEMT with low-voltage Silicon MOSFET resulting in superior reliability and performance. It integrates the Gen IV SuperGaN platform that uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over its counterpart, Silicon. offers improved efficiency over Silicon due to inherent lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The RoHS-compliant Cascode GaN FET offers improved power density, reduced system size, and weight, and overall lower system cost, enabling increased efficiency in both hard- and soft-switched circuit topologies. It is available in a through-hole package that measures 10.25 x 28.79 mm.