The TP65H150LSG from Transphorm is an N-Channel Enhancement Mode GaN Field Effect Transistor (FET) that is ideal for datacom, broad industrial, PV inverter, and servo motor applications. This transistor has a drain-source voltage of over 650 V, a gate threshold voltage of up to 4.8 V, and a drain-source on-resistance of less than 307 milli-ohms. It has a continuous drain current of up to 15 A and a pulsed drain current of less than 60 A. This GaN transistor is a normally-off device that combines state-of-the-art high-voltage GaN HEMT with low-voltage Silicon MOSFET resulting in superior reliability and performance. It offers improved efficiency over Silicon due to its inherent lower gate charge, lower crossover loss, and smaller reverse recovery charge.

This JEDEC-qualified GaN FET ensures improved power density, reduced system size and weight, and overall lower system cost, enabling AC-DC bridgeless totem-pole power factor correction (PFC) designs. It offers a wide gate safety margin and transient over-voltage protection to prevent over-voltage-related damages. This RoHS-compliant transistor is available in a surface mount package that measures 8 x 8 mm.