The TP65H480G4JSG from Transphorm is a GaN Field Effect Transistor that is ideal for consumers, power adapters, and low-power SMPS and lighting applications. It has a drain-source voltage of over 650 V, a gate threshold voltage of 2.1 V, and a drain-source on-resistance of 480 milli-ohms. This power transistor has a continuous drain current of up to 3.6 A and a pulsed drain current of less than 17 A. It uses high-voltage GaN HEMT technology with a low-voltage Silicon MOSFET for top-tier reliability and performance. This RoHS-compliant transistor simplifies the manufacturing process with advanced epitaxial and patented design techniques, enhancing efficiency by reducing gate charge, output capacitance, crossover loss, and reverse recovery charge compared to Silicon counterparts. It is available in a surface-mount package that measures 6.0 x 5.0 x 1.0 mm.