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TP90H050WS

GaN Power Transistor by Transphorm (32 more products)
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The TP90H050WS from Transphorm is a GaN Power Transistor with Gate Threshold Voltage 3.4 to 4.4 V, Drain Source Voltage 900 V, Drain Source Resistance 50 to 105 milli-ohm, Continous Drain Current 22 to 34 A, Pulsed Drain Current 150 A. Tags: Through Hole. More details for TP90H050WS can be seen below.

Product Specifications

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Product Details

  • Part Number
    TP90H050WS
  • Manufacturer
    Transphorm
  • Description
    900V 50mΩ GaN FET in TO-247

General

  • Configuration
    Single
  • Gate Threshold Voltage
    3.4 to 4.4 V
  • Drain Source Voltage
    900 V
  • Drain Source Resistance
    50 to 105 milli-ohm
  • Continous Drain Current
    22 to 34 A
  • Pulsed Drain Current
    150 A
  • Total Charge
    15 nc
  • Input Capacitance
    1000 pF
  • Output Capacitance
    115 pF
  • Turn-on Delay Time
    48 ns
  • Turn-off Delay Time
    70 ns
  • Rise Time
    12 ns
  • Fall Time
    12 ns
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Datacom, Broad industrial, PV inverter, Servo motor

Technical Documents
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