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WI61195T

GaN Power Transistor by Wise-integration (4 more products)
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The WI61195T from Wise-integration is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 1.8 V, Drain Source Voltage 650 V, Drain Source Resistance 195 to 380 milli-ohm, Continous Drain Current 8 A, Total Charge 2.75 nC. Tags: Surface Mount. More details for WI61195T can be seen below.

Product Specifications

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Product Details

  • Part Number
    WI61195T
  • Manufacturer
    Wise-integration
  • Description
    650 V, 195 to 380 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 1.8 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    195 to 380 milli-ohm
  • Continous Drain Current
    8 A
  • Total Charge
    2.75 nC
  • Input Capacitance
    96.8 pF
  • Output Capacitance
    21.9 pF
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN
  • Applications
    High efficiency power conversion, High density power conversion, AC-DC, DC-DC, DC-AC, Bridgeless Totem Pole PFC, ACF (active clamp flyback), LLC resonant converter, Half-bridge topologies, Synchronous Buck or Boost, Small-Medium UPS, Fast Battery Charging
  • Dimensions
    8 x 8 mm

Technical Documents
View details on the manufacturer's website
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