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PGC8FN65R160A

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The PGC8FN65R160A from Xindao Electronic Technology is a GaN Power Transistor with Gate Threshold Voltage 1 to 3 V, Drain Source Voltage 650 V, Drain Source Resistance 160 to 340 milli-ohm, Continous Drain Current 16 A, Pulsed Drain Current 21 A. Tags: Surface Mount. More details for PGC8FN65R160A can be seen below.

Product Specifications

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Product Details

  • Part Number
    PGC8FN65R160A
  • Manufacturer
    Xindao Electronic Technology
  • Description
    650 V, 160 to 340 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1 to 3 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    160 to 340 milli-ohm
  • Continous Drain Current
    16 A
  • Pulsed Drain Current
    21 A
  • Total Charge
    7.8 nC
  • Input Capacitance
    378 pF
  • Output Capacitance
    23 pF
  • Turn-on Delay Time
    2.5 ns
  • Turn-off Delay Time
    9.7 ns
  • Rise Time
    7 ns
  • Fall Time
    28 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN8L
  • Applications
    Fast charger, Renewable energy, Telecom and data-com, Servo motors
  • Dimensions
    8 x 8 mm

Technical Documents
View details on the manufacturer's website
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