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  6. PGCDPD65R600A

PGCDPD65R600A

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The PGCDPD65R600A from Xindao Electronic Technology is a GaN Power Transistor with Gate Threshold Voltage 2.5 to 4.5 V, Drain Source Voltage 650 V, Drain Source Resistance 600 to 1260 milli-ohm, Continous Drain Current 4.8 A, Pulsed Drain Current 14 A. Tags: Surface Mount. More details for PGCDPD65R600A can be seen below.

Product Specifications

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Product Details

  • Part Number
    PGCDPD65R600A
  • Manufacturer
    Xindao Electronic Technology
  • Description
    650 V, 600 to 1260 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    2.5 to 4.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    600 to 1260 milli-ohm
  • Continous Drain Current
    4.8 A
  • Pulsed Drain Current
    14 A
  • Total Charge
    7 nC
  • Input Capacitance
    243 pF
  • Output Capacitance
    5.3 pF
  • Turn-on Delay Time
    6 ns
  • Turn-off Delay Time
    7 ns
  • Rise Time
    15 ns
  • Fall Time
    14 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Fast charger, Renewable energy, Telecom and data-com, Servo motors

Technical Documents
View details on the manufacturer's website
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