1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. Xindao Electronic Technology
  6. PGCTOF65R600A

PGCTOF65R600A

Download Datasheet Request Quote

Note : Your request will be directed to Xindao Electronic Technology.

The PGCTOF65R600A from Xindao Electronic Technology is a GaN Power Transistor with Gate Threshold Voltage 3.3 to 4.8 V, Drain Source Voltage 650 V, Drain Source Resistance 600 to 1260 milli-ohm, Continous Drain Current 4.8 A, Pulsed Drain Current 8 A. Tags: Through Hole. More details for PGCTOF65R600A can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PGCTOF65R600A
  • Manufacturer
    Xindao Electronic Technology
  • Description
    650 V, 600 to 1260 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    3.3 to 4.8 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    600 to 1260 milli-ohm
  • Continous Drain Current
    4.8 A
  • Pulsed Drain Current
    8 A
  • Total Charge
    7.9 nC
  • Input Capacitance
    293 pF
  • Output Capacitance
    17 pF
  • Turn-on Delay Time
    3.2 ns
  • Turn-off Delay Time
    7.4 ns
  • Rise Time
    5.5 ns
  • Fall Time
    27 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    Fast charger, Renewable energy, Telecom and data-com, Servo motors

Technical Documents
View details on the manufacturer's website
View similar products

Latest GaN Transistors

View more products