PGH8N65R300A

Note : Your request will be directed to Xindao Electronic Technology.

The PGH8N65R300A from Xindao Electronic Technology is a GaN Power Transistor with Gate Threshold Voltage 2.5 to 3 V, Drain Source Voltage 650 V, Drain Source Resistance 300 to 600 milli-ohm, Continous Drain Current 8 A, Pulsed Drain Current 11 A. Tags: Surface Mount. More details for PGH8N65R300A can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PGH8N65R300A
  • Manufacturer
    Xindao Electronic Technology
  • Description
    650 V, 300 to 600 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    2.5 to 3 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    300 to 600 milli-ohm
  • Continous Drain Current
    8 A
  • Pulsed Drain Current
    11 A
  • Total Charge
    1.35 nC
  • Input Capacitance
    46 pF
  • Output Capacitance
    18 pF
  • Turn-on Delay Time
    4.4 ns
  • Turn-off Delay Time
    4.1 ns
  • Rise Time
    11.8 ns
  • Fall Time
    11.2 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5060-8L
  • Applications
    Fast charger, Renewable energy, Telecom and data-com, Servo motors

Technical Documents

Latest GaN Transistors

View more products